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Infineon Technologies (BF 1005S E6327)
PartNo:
BF 1005S E6327
Manufacturers:
Infineon Technologies
Qty:
14880
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Description:
Silicon N-Channel MOSFET Tetrode
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Product Information:
RoHS:
Details
Transistor Type:
MOSFET
Transistor Polarity:
N-Channel
Frequency:
Gain:
1 GHz
Output Power:
200 mW
Vds - Drain-Source Breakdown Voltage:
8 V
Id - Continuous Drain Current:
0.025 A
Vgs - Gate-Source Breakdown Voltage:
3 V
Configuration:
Single Dual Gate
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
SOT-143
Packaging:
Reel
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
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BF 1005S E6327
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